SEMI OpenIR  > 中国科学院半导体研究所(2009年前)
量子阱中电子隧穿逃逸时间的研究
张玉民; 郑厚植
1994
Source Publication红外与毫米波学报
Volume13Issue:1Pages:69
metadata_83中科院半导体所
Subject Area半导体物理
Indexed ByCSCD
Language中文
CSCD IDCSCD:239676
Date Available2010-11-23
Citation statistics
Document Type期刊论文
Identifierhttp://ir.semi.ac.cn/handle/172111/19951
Collection中国科学院半导体研究所(2009年前)
Recommended Citation
GB/T 7714
张玉民,郑厚植. 量子阱中电子隧穿逃逸时间的研究[J]. 红外与毫米波学报,1994,13(1):69.
APA 张玉民,&郑厚植.(1994).量子阱中电子隧穿逃逸时间的研究.红外与毫米波学报,13(1),69.
MLA 张玉民,et al."量子阱中电子隧穿逃逸时间的研究".红外与毫米波学报 13.1(1994):69.
Files in This Item:
File Name/Size DocType Version Access License
6077.pdf(90KB) 限制开放--Application Full Text
Related Services
Recommend this item
Bookmark
Usage statistics
Export to Endnote
Google Scholar
Similar articles in Google Scholar
[张玉民]'s Articles
[郑厚植]'s Articles
Baidu academic
Similar articles in Baidu academic
[张玉民]'s Articles
[郑厚植]'s Articles
Bing Scholar
Similar articles in Bing Scholar
[张玉民]'s Articles
[郑厚植]'s Articles
Terms of Use
No data!
Social Bookmark/Share
All comments (0)
No comment.
 

Items in the repository are protected by copyright, with all rights reserved, unless otherwise indicated.