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InxGa(1-x)As/AlyGa(1-y)As多量子阱的高压光致发光研究 | |
刘振先; 李国华; 韩和相; 汪兆平 | |
1994 | |
Source Publication | 红外与毫米波学报
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Volume | 13Issue:1Pages:45 |
metadata_83 | 中科院半导体所 |
Subject Area | 光电子学 |
Funding Organization | 国家教委基金,国家自然科学基金 |
Indexed By | CSCD |
Language | 中文 |
Date Available | 2010-11-23 |
Citation statistics | |
Document Type | 期刊论文 |
Identifier | http://ir.semi.ac.cn/handle/172111/19941 |
Collection | 中国科学院半导体研究所(2009年前) |
Recommended Citation GB/T 7714 | 刘振先,李国华,韩和相,等. InxGa(1-x)As/AlyGa(1-y)As多量子阱的高压光致发光研究[J]. 红外与毫米波学报,1994,13(1):45. |
APA | 刘振先,李国华,韩和相,&汪兆平.(1994).InxGa(1-x)As/AlyGa(1-y)As多量子阱的高压光致发光研究.红外与毫米波学报,13(1),45. |
MLA | 刘振先,et al."InxGa(1-x)As/AlyGa(1-y)As多量子阱的高压光致发光研究".红外与毫米波学报 13.1(1994):45. |
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