SEMI OpenIR  > 中国科学院半导体研究所(2009年前)
InxGa(1-x)As/GaAs应变量子阱光学性质
李锋; 张耀辉; 江德生; 王佑祥
1994
Source Publication红外与毫米波学报
Volume13Issue:5Pages:340
metadata_83中科院半导体所
Subject Area半导体物理
Funding Organization国家自然科学基金
Indexed ByCSCD
Language中文
Date Available2010-11-23
Citation statistics
Document Type期刊论文
Identifierhttp://ir.semi.ac.cn/handle/172111/19939
Collection中国科学院半导体研究所(2009年前)
Recommended Citation
GB/T 7714
李锋,张耀辉,江德生,等. InxGa(1-x)As/GaAs应变量子阱光学性质[J]. 红外与毫米波学报,1994,13(5):340.
APA 李锋,张耀辉,江德生,&王佑祥.(1994).InxGa(1-x)As/GaAs应变量子阱光学性质.红外与毫米波学报,13(5),340.
MLA 李锋,et al."InxGa(1-x)As/GaAs应变量子阱光学性质".红外与毫米波学报 13.5(1994):340.
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