SEMI OpenIR  > 中国科学院半导体研究所(2009年前)
GaAs/GaAlAs单量子阱光调制器电学行为
周洁; 封松林; 卢励吾; 孙景兰
1994
Source Publication红外与毫米波学报
Volume13Issue:1Pages:65
Abstract利用导纳谱研究了GaAs/GaAlAs单量子阱光调制器的电学行为, 观察到了量子阱中电子或空穴子能带的“场致去局域化”的物理现象。
metadata_83中科院半导体所;中国科学技术大学北京研究生院
Subject Area光电子学
Indexed ByCSCD
Language中文
CSCD IDCSCD:239724
Date Available2010-11-23
Citation statistics
Document Type期刊论文
Identifierhttp://ir.semi.ac.cn/handle/172111/19933
Collection中国科学院半导体研究所(2009年前)
Recommended Citation
GB/T 7714
周洁,封松林,卢励吾,等. GaAs/GaAlAs单量子阱光调制器电学行为[J]. 红外与毫米波学报,1994,13(1):65.
APA 周洁,封松林,卢励吾,&孙景兰.(1994).GaAs/GaAlAs单量子阱光调制器电学行为.红外与毫米波学报,13(1),65.
MLA 周洁,et al."GaAs/GaAlAs单量子阱光调制器电学行为".红外与毫米波学报 13.1(1994):65.
Files in This Item:
File Name/Size DocType Version Access License
6068.pdf(158KB) 限制开放--Application Full Text
Related Services
Recommend this item
Bookmark
Usage statistics
Export to Endnote
Google Scholar
Similar articles in Google Scholar
[周洁]'s Articles
[封松林]'s Articles
[卢励吾]'s Articles
Baidu academic
Similar articles in Baidu academic
[周洁]'s Articles
[封松林]'s Articles
[卢励吾]'s Articles
Bing Scholar
Similar articles in Bing Scholar
[周洁]'s Articles
[封松林]'s Articles
[卢励吾]'s Articles
Terms of Use
No data!
Social Bookmark/Share
All comments (0)
No comment.
 

Items in the repository are protected by copyright, with all rights reserved, unless otherwise indicated.