SEMI OpenIR  > 中国科学院半导体研究所(2009年前)
铯对GaAs(100)表面氧化的催化作用
徐彭寿; 徐世红; 刘先明; 朱警生; 麻茂生; 张裕恒; 许振嘉
1994
Source Publication化学物理学报
Volume7Issue:5Pages:455
metadata_83中国科学技术大学;中科院半导体所
Subject Area半导体化学
Funding Organization国家自然科学基金
Indexed ByCSCD
Language中文
CSCD IDCSCD:240848
Date Available2010-11-23
Citation statistics
Document Type期刊论文
Identifierhttp://ir.semi.ac.cn/handle/172111/19931
Collection中国科学院半导体研究所(2009年前)
Recommended Citation
GB/T 7714
徐彭寿,徐世红,刘先明,等. 铯对GaAs(100)表面氧化的催化作用[J]. 化学物理学报,1994,7(5):455.
APA 徐彭寿.,徐世红.,刘先明.,朱警生.,麻茂生.,...&许振嘉.(1994).铯对GaAs(100)表面氧化的催化作用.化学物理学报,7(5),455.
MLA 徐彭寿,et al."铯对GaAs(100)表面氧化的催化作用".化学物理学报 7.5(1994):455.
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