SEMI OpenIR  > 中国科学院半导体研究所(2009年前)
硅中Rh-B络合物性质的理论研究
曹洪凯; 倪国权; 吴汲安
1994
Source Publication化学物理学报
Volume7Issue:2Pages:131
metadata_83山东招远市教师进修学校;中科院上海光学精密机械所;中科院半导体所
Subject Area半导体材料
Funding Organization国家自然科学基金
Indexed ByCSCD
Language中文
CSCD IDCSCD:240892
Date Available2010-11-23
Citation statistics
Document Type期刊论文
Identifierhttp://ir.semi.ac.cn/handle/172111/19929
Collection中国科学院半导体研究所(2009年前)
Recommended Citation
GB/T 7714
曹洪凯,倪国权,吴汲安. 硅中Rh-B络合物性质的理论研究[J]. 化学物理学报,1994,7(2):131.
APA 曹洪凯,倪国权,&吴汲安.(1994).硅中Rh-B络合物性质的理论研究.化学物理学报,7(2),131.
MLA 曹洪凯,et al."硅中Rh-B络合物性质的理论研究".化学物理学报 7.2(1994):131.
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