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低压-金属有机物汽相外延生长的Ga(1-x)InxAs/InP激光器中深能级的研究
卢励吾; 周洁; 封松林; 段树坤
1994
Source Publication物理学报
Volume43Issue:5Pages:779
Abstract应用深能级瞬态谱(DLTS)技术详细研究低压-金属有机物汽相外延(LP-MOVPE)生长的Ga_(0.74)In_(0.53)As/InP量子阱、宽接触和质子轰击条形异质结激光器中的深能级。样品的DLTS表明,在宽接触激光器的i-Ga_(0.47)In(0.53)As有源层里观察到 H1(Ev+0.09eV)和E1(E_c-0.35eV)陷阱,它们可能分别与样品生长过程中扩散到i-Ga_(0.47)In_(0.53)As有源层的Zn和材料本身的原生缺陷有关。而条形激光器的i-Ga_(0.47)In_(0.53)A_s有源层的 H_2(E_v+0.11eV)和 E_2(E_q-0.42eV)陷阱则可能是H1和E1与质子轰击引起的损伤相互作用的产物 。
metadata_83中科院半导体所
Subject Area半导体材料
Indexed ByCSCD
Language中文
Date Available2010-11-23
Citation statistics
Document Type期刊论文
Identifierhttp://ir.semi.ac.cn/handle/172111/19909
Collection中国科学院半导体研究所(2009年前)
Recommended Citation
GB/T 7714
卢励吾,周洁,封松林,等. 低压-金属有机物汽相外延生长的Ga(1-x)InxAs/InP激光器中深能级的研究[J]. 物理学报,1994,43(5):779.
APA 卢励吾,周洁,封松林,&段树坤.(1994).低压-金属有机物汽相外延生长的Ga(1-x)InxAs/InP激光器中深能级的研究.物理学报,43(5),779.
MLA 卢励吾,et al."低压-金属有机物汽相外延生长的Ga(1-x)InxAs/InP激光器中深能级的研究".物理学报 43.5(1994):779.
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