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1MeVSi+衬底加温注入Al(0.3)Ca(0.7)As/GaAs超晶格和GaAs的晶格损伤研究
李岱青; 宫宝安; 万亚; 朱沛然; 周俊思; 徐天冰; 穆善明; 赵清太; 王忠烈
1994
Source Publication物理学报
Volume43Issue:8Pages:1311
Abstract用卢瑟福背散射沟道技术研究了1MeVSi~+在衬底加温和室温下以不同剂量注入Al_(0.3)Ga_(0.7)As/GaAs超晶格和GaAs后的晶格损伤。在衬底加温下, 观察到Al_(0.3)Ga_(0.7)As/GaAs超晶格和GaAs都存在一个动态退火速率与缺陷产生速率相平衡的剂量范围, 以及两种速率失去平衡的临界剂量。用热尖峰与碰撞模型解释了晶格损伤积累与注入剂量和衬底温度的关系。
metadata_83烟台师范学院物理系;中科院物理所;中科院半导体所;北京大学微电子学所
Subject Area半导体材料
Funding Organization省市基金
Indexed ByCSCD
Language中文
CSCD IDCSCD:250008
Date Available2010-11-23
Citation statistics
Document Type期刊论文
Identifierhttp://ir.semi.ac.cn/handle/172111/19905
Collection中国科学院半导体研究所(2009年前)
Recommended Citation
GB/T 7714
李岱青,宫宝安,万亚,等. 1MeVSi+衬底加温注入Al(0.3)Ca(0.7)As/GaAs超晶格和GaAs的晶格损伤研究[J]. 物理学报,1994,43(8):1311.
APA 李岱青.,宫宝安.,万亚.,朱沛然.,周俊思.,...&王忠烈.(1994).1MeVSi+衬底加温注入Al(0.3)Ca(0.7)As/GaAs超晶格和GaAs的晶格损伤研究.物理学报,43(8),1311.
MLA 李岱青,et al."1MeVSi+衬底加温注入Al(0.3)Ca(0.7)As/GaAs超晶格和GaAs的晶格损伤研究".物理学报 43.8(1994):1311.
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