深冷中性铝团簇的产生和光电离

SEMI OpenIR > 中国科学院半导体研究所（2009年前）

	深冷中性铝团簇的产生和光电离
	倪国权; 周汝枋; 翟华金; 王育竹; 吴汲安
	1994
Source Publication	中国激光
Volume	21 Issue:12 Pages:957
metadata_83	中科院上海光学精密机械所;中科院半导体所
Subject Area	半导体化学
Funding Organization	国家自然科学基金
Indexed By	CSCD
Language	中文
CSCD ID	CSCD:253985
Date Available	2010-11-23
Citation statistics
Document Type	期刊论文
Identifier	http://ir.semi.ac.cn/handle/172111/19901
Collection	中国科学院半导体研究所（2009年前）
Recommended Citation GB/T 7714	倪国权,周汝枋,翟华金,等. 深冷中性铝团簇的产生和光电离[J]. 中国激光,1994,21(12):957.
APA	倪国权,周汝枋,翟华金,王育竹,&吴汲安.(1994).深冷中性铝团簇的产生和光电离.中国激光,21(12),957.
MLA	倪国权,et al."深冷中性铝团簇的产生和光电离".中国激光 21.12(1994):957.

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