SEMI OpenIR  > 中国科学院半导体研究所(2009年前)
深冷中性铝团簇的产生和光电离
倪国权; 周汝枋; 翟华金; 王育竹; 吴汲安
1994
Source Publication中国激光
Volume21Issue:12Pages:957
metadata_83中科院上海光学精密机械所;中科院半导体所
Subject Area半导体化学
Funding Organization国家自然科学基金
Indexed ByCSCD
Language中文
CSCD IDCSCD:253985
Date Available2010-11-23
Citation statistics
Document Type期刊论文
Identifierhttp://ir.semi.ac.cn/handle/172111/19901
Collection中国科学院半导体研究所(2009年前)
Recommended Citation
GB/T 7714
倪国权,周汝枋,翟华金,等. 深冷中性铝团簇的产生和光电离[J]. 中国激光,1994,21(12):957.
APA 倪国权,周汝枋,翟华金,王育竹,&吴汲安.(1994).深冷中性铝团簇的产生和光电离.中国激光,21(12),957.
MLA 倪国权,et al."深冷中性铝团簇的产生和光电离".中国激光 21.12(1994):957.
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