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用低能离子束淀积技术在硅(111)衬底上生长氧化铈外延薄膜
黄大定; 秦复光; 姚振钰; 刘志凯; 任治璋; 林兰英; 高维滨; 任庆余
1995
Source Publication半导体学报
Volume16Issue:2Pages:153
Abstract采用质量分离的低能双离子束淀积(IBD)技术,在硅(111)衬底上共淀积,生长了氧化铈外延薄膜。椭圆偏振仪测得,膜厚2000A。俄歇能谱仪测得,外延层内铈、氧分布均匀,具有很好的正化学比。X射线双晶衍射得到明显的氧化铈(111),(222)峰,半高宽≤23''。
metadata_83中科院半导体所
Subject Area半导体材料
Indexed ByCSCD
Language中文
CSCD IDCSCD:261953
Date Available2010-11-23
Citation statistics
Cited Times:1[CSCD]   [CSCD Record]
Document Type期刊论文
Identifierhttp://ir.semi.ac.cn/handle/172111/19881
Collection中国科学院半导体研究所(2009年前)
Recommended Citation
GB/T 7714
黄大定,秦复光,姚振钰,等. 用低能离子束淀积技术在硅(111)衬底上生长氧化铈外延薄膜[J]. 半导体学报,1995,16(2):153.
APA 黄大定.,秦复光.,姚振钰.,刘志凯.,任治璋.,...&任庆余.(1995).用低能离子束淀积技术在硅(111)衬底上生长氧化铈外延薄膜.半导体学报,16(2),153.
MLA 黄大定,et al."用低能离子束淀积技术在硅(111)衬底上生长氧化铈外延薄膜".半导体学报 16.2(1995):153.
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