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用GSMBE法生长匹配型GaInAsP/InP材料及量子阱、面发射激发器结构的研究
林世鸣
1995
Source Publication半导体学报
Volume16Issue:5Pages:339
Abstract报道通过在位组分调整,配合X射线双晶衍射测试和光致发光测试,生长了与InP精确匹配的GaLnAsP(失配度达4×10~(-4)).生长了GaInAs/InP量子阱结构的光致发光半峰宽达5.72meV.实验表明源炉档板开启 后生长速率是不均匀的,这对生长量子阱和DBR结构是个值得注意的问题,经考虑生长速率变化后生长的面发射激光器结构样片的反射率谱与理论计算的结果很好地相符.
metadata_83中科院半导体所
Subject Area半导体材料
Funding Organization国家自然科学基金
Indexed ByCSCD
Language中文
CSCD IDCSCD:261954
Date Available2010-11-23
Citation statistics
Document Type期刊论文
Identifierhttp://ir.semi.ac.cn/handle/172111/19879
Collection中国科学院半导体研究所(2009年前)
Recommended Citation
GB/T 7714
林世鸣. 用GSMBE法生长匹配型GaInAsP/InP材料及量子阱、面发射激发器结构的研究[J]. 半导体学报,1995,16(5):339.
APA 林世鸣.(1995).用GSMBE法生长匹配型GaInAsP/InP材料及量子阱、面发射激发器结构的研究.半导体学报,16(5),339.
MLA 林世鸣."用GSMBE法生长匹配型GaInAsP/InP材料及量子阱、面发射激发器结构的研究".半导体学报 16.5(1995):339.
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