SEMI OpenIR  > 中国科学院半导体研究所(2009年前)
像势对量子阱中类氢杂质Stark效应的影响
张向东; 李有成; 孔小均; 魏成文
1995
Source Publication半导体学报
Volume16Issue:8Pages:561
Abstract在考虑像势影响的情况下,利用变分方法计算了垂直电场下量子阱中类氢杂质的结合能,给出了像势引起的结合能增量随阱宽、杂质位置和电场的变化曲线.结果表明:考虑像势对量子阱中类氢杂质结合能及其Stark效应的影响是很必要的,而且自像势和互像势对类氢杂质结合能Stark效应的影响是相反的.
metadata_83中科院半导体所;河北师范大学物理系
Subject Area半导体物理
Indexed ByCSCD
Language中文
CSCD IDCSCD:261962
Date Available2010-11-23
Citation statistics
Document Type期刊论文
Identifierhttp://ir.semi.ac.cn/handle/172111/19877
Collection中国科学院半导体研究所(2009年前)
Recommended Citation
GB/T 7714
张向东,李有成,孔小均,等. 像势对量子阱中类氢杂质Stark效应的影响[J]. 半导体学报,1995,16(8):561.
APA 张向东,李有成,孔小均,&魏成文.(1995).像势对量子阱中类氢杂质Stark效应的影响.半导体学报,16(8),561.
MLA 张向东,et al."像势对量子阱中类氢杂质Stark效应的影响".半导体学报 16.8(1995):561.
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