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量子阱激光器光增益温度关系及对激射特性的影响
张敬明; 徐遵图; 杨国文; 郑婉华; 钱毅; 李世祖; 肖建伟; 徐俊英; 陈良惠
1995
Source Publication半导体学报
Volume16Issue:9Pages:655
Abstract计算了不同温度下GaAs/AlGaAs量子阱材料光增益与载流子密度的关系。根据B-D条件:ΔF>hγ≥E_g+E_(c1)+E_(v1),得到了ΔF、峰值增益光子能量和E_g+E_(v1)与载流子密度的关系,并得到了不同增益的激光器阈值电流温度关系。计算结果解释了实验出现的阈值电流温度的反常特性和波长开关现象,并且与器件温度特性符合。
metadata_83中科院半导体所
Subject Area光电子学
Funding Organization国家863计划
Indexed ByCSCD
Language中文
CSCD IDCSCD:261990
Date Available2010-11-23
Citation statistics
Document Type期刊论文
Identifierhttp://ir.semi.ac.cn/handle/172111/19865
Collection中国科学院半导体研究所(2009年前)
Recommended Citation
GB/T 7714
张敬明,徐遵图,杨国文,等. 量子阱激光器光增益温度关系及对激射特性的影响[J]. 半导体学报,1995,16(9):655.
APA 张敬明.,徐遵图.,杨国文.,郑婉华.,钱毅.,...&陈良惠.(1995).量子阱激光器光增益温度关系及对激射特性的影响.半导体学报,16(9),655.
MLA 张敬明,et al."量子阱激光器光增益温度关系及对激射特性的影响".半导体学报 16.9(1995):655.
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