SEMI OpenIR  > 中国科学院半导体研究所(2009年前)
非晶硅X-射线探测阵列的研究
郑怀德; 廖显伯; 孔光临; 刁宏伟; 万旭东; 夏传铖; 潘广勒; 肖君
1995
Source Publication半导体学报
Volume16Issue:6Pages:439
Abstract研制出a-Si:H pin型X射线间接探测线阵,它探测的是X-射线在闪光体(CsI)所激发的荧光,制备出单元面积分别为2.5×2.5mm~2、1.6×1.6mm~2和100×100μm~2的16、25、320单元的线阵.器件的暗电流达到1.0、10~(-12)A/mm~2(-10mV),光灵敏度~0.35μA/μW*600nm).该文报道了X-射线探测阵列的制备及测试结果.
metadata_83中科院半导体所
Subject Area半导体材料
Indexed ByCSCD
Language中文
CSCD IDCSCD:262020
Date Available2010-11-23
Citation statistics
Document Type期刊论文
Identifierhttp://ir.semi.ac.cn/handle/172111/19849
Collection中国科学院半导体研究所(2009年前)
Recommended Citation
GB/T 7714
郑怀德,廖显伯,孔光临,等. 非晶硅X-射线探测阵列的研究[J]. 半导体学报,1995,16(6):439.
APA 郑怀德.,廖显伯.,孔光临.,刁宏伟.,万旭东.,...&肖君.(1995).非晶硅X-射线探测阵列的研究.半导体学报,16(6),439.
MLA 郑怀德,et al."非晶硅X-射线探测阵列的研究".半导体学报 16.6(1995):439.
Files in This Item:
File Name/Size DocType Version Access License
6024.pdf(228KB) 限制开放--Application Full Text
Related Services
Recommend this item
Bookmark
Usage statistics
Export to Endnote
Google Scholar
Similar articles in Google Scholar
[郑怀德]'s Articles
[廖显伯]'s Articles
[孔光临]'s Articles
Baidu academic
Similar articles in Baidu academic
[郑怀德]'s Articles
[廖显伯]'s Articles
[孔光临]'s Articles
Bing Scholar
Similar articles in Bing Scholar
[郑怀德]'s Articles
[廖显伯]'s Articles
[孔光临]'s Articles
Terms of Use
No data!
Social Bookmark/Share
All comments (0)
No comment.
 

Items in the repository are protected by copyright, with all rights reserved, unless otherwise indicated.