SEMI OpenIR  > 中国科学院半导体研究所(2009年前)
低阈值基横模脊形波导GaAs/AlGaAs单量子阱激光器
徐遵图; 杨国文; 肖建伟; 徐俊英; 张敬明; 郑婉华; 瞿伟; 陈良惠; 毕可奎
1995
Source Publication半导体学报
Volume16Issue:8Pages:598
Abstract报道了脊形波导结构GaAs/AlGaAs量子阱激光器的研究成果,采用湿法化学腐蚀方法,通过对器件结构参数的优化,制备了性能优越的脊形波导GaAs/AlGaAs量子阱激光器,器件的阈值电流低于10mA,最低值为7.3mA.而且实现了基横模工作,这是国内报道的该结构激光器的最好水平.
metadata_83中科院半导体所
Subject Area光电子学
Indexed ByCSCD
Language中文
CSCD IDCSCD:262036
Date Available2010-11-23
Citation statistics
Document Type期刊论文
Identifierhttp://ir.semi.ac.cn/handle/172111/19843
Collection中国科学院半导体研究所(2009年前)
Recommended Citation
GB/T 7714
徐遵图,杨国文,肖建伟,等. 低阈值基横模脊形波导GaAs/AlGaAs单量子阱激光器[J]. 半导体学报,1995,16(8):598.
APA 徐遵图.,杨国文.,肖建伟.,徐俊英.,张敬明.,...&毕可奎.(1995).低阈值基横模脊形波导GaAs/AlGaAs单量子阱激光器.半导体学报,16(8),598.
MLA 徐遵图,et al."低阈值基横模脊形波导GaAs/AlGaAs单量子阱激光器".半导体学报 16.8(1995):598.
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