SEMI OpenIR  > 中国科学院半导体研究所(2009年前)
Si(0.5)Ge(0.5)合金的热氧化物的研究
邢益荣; 崔玉德; 殷士端; 张敬平; 李侠; 朱沛然; 徐田冰
1995
Source Publication半导体学报
Volume16Issue:7Pages:491
metadata_83中科院半导体所;中科院物理所
Subject Area半导体化学
Indexed ByCSCD
Language中文
CSCD IDCSCD:262059
Date Available2010-11-23
Citation statistics
Document Type期刊论文
Identifierhttp://ir.semi.ac.cn/handle/172111/19837
Collection中国科学院半导体研究所(2009年前)
Recommended Citation
GB/T 7714
邢益荣,崔玉德,殷士端,等. Si(0.5)Ge(0.5)合金的热氧化物的研究[J]. 半导体学报,1995,16(7):491.
APA 邢益荣.,崔玉德.,殷士端.,张敬平.,李侠.,...&徐田冰.(1995).Si(0.5)Ge(0.5)合金的热氧化物的研究.半导体学报,16(7),491.
MLA 邢益荣,et al."Si(0.5)Ge(0.5)合金的热氧化物的研究".半导体学报 16.7(1995):491.
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