SEMI OpenIR  > 中国科学院半导体研究所(2009年前)
SIPOS膜的结构组成
谭凌; 雷沛云; 梁骏吾
1995
Source Publication半导体学报
Volume16Issue:12Pages:890
Abstract采用常压化学气相淀积(APCVD)方法,生长了不同氧含量的SIPOS(半绝缘含氧多晶硅)膜,研究了SIPOS膜的结构组成。SIPOS膜是微晶,多晶和共晶共存的结构,其晶态物中含有缺氧的α-Cristobalite(方石英)结构。膜中含氧量可变,以SiO_x(x<2)表示。随着氧含量的增加或减少,其结构向非晶或多晶方向移动。膜中氧原子分布不均匀,局部有氧原子微区集中或缺少现象,使x=0或1或2。
metadata_83中科院半导体所
Subject Area半导体材料
Funding Organization省市基金
Indexed ByCSCD
Language中文
CSCD IDCSCD:262064
Date Available2010-11-23
Citation statistics
Document Type期刊论文
Identifierhttp://ir.semi.ac.cn/handle/172111/19835
Collection中国科学院半导体研究所(2009年前)
Recommended Citation
GB/T 7714
谭凌,雷沛云,梁骏吾. SIPOS膜的结构组成[J]. 半导体学报,1995,16(12):890.
APA 谭凌,雷沛云,&梁骏吾.(1995).SIPOS膜的结构组成.半导体学报,16(12),890.
MLA 谭凌,et al."SIPOS膜的结构组成".半导体学报 16.12(1995):890.
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