SEMI OpenIR  > 中国科学院半导体研究所(2009年前)
NiIn(Ge)/n-GaAs欧姆接触的研究
范缇文; 丁孙安; 张金福; 许振嘉
1995
Source Publication半导体学报
Volume16Issue:7Pages:541
metadata_83中科院半导体所
Subject Area半导体材料
Funding Organization五年计划
Indexed ByCSCD
Language中文
CSCD IDCSCD:262066
Date Available2010-11-23
Citation statistics
Document Type期刊论文
Identifierhttp://ir.semi.ac.cn/handle/172111/19833
Collection中国科学院半导体研究所(2009年前)
Recommended Citation
GB/T 7714
范缇文,丁孙安,张金福,等. NiIn(Ge)/n-GaAs欧姆接触的研究[J]. 半导体学报,1995,16(7):541.
APA 范缇文,丁孙安,张金福,&许振嘉.(1995).NiIn(Ge)/n-GaAs欧姆接触的研究.半导体学报,16(7),541.
MLA 范缇文,et al."NiIn(Ge)/n-GaAs欧姆接触的研究".半导体学报 16.7(1995):541.
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