SEMI OpenIR  > 中国科学院半导体研究所(2009年前)
MBE生长轻掺Si高迁移率GaAs材料的杂质补偿特性研究
牛智川; 周增圻; 林耀望; 李朝勇
1995
Source Publication半导体学报
Volume16Issue:12Pages:897
Abstract报道了用MBE生长轻掺Si高迁移率GaAs材料的杂质补偿特性实验研究。已得到77K温度下迁移率为16.2×10~4cm~2/(V·s)的GaAs材料。样品的Hall测量结果表明:在较低的杂质浓度范围(1×10~(13)cm~(-3)<n<1×10~(15)cm~(-3))内,在大体相同的生长温度(590℃左右)下,选择适当的生长速率Gr会增强对浅受主杂质的抑制作用,同时也会一致Si的自补偿效应,减小杂质的补偿度N_a/N_d之值,从而提高MBE外延GaAs材料的迁移率。
metadata_83中科院半导体所
Subject Area半导体材料
Indexed ByCSCD
Language中文
CSCD IDCSCD:262073
Date Available2010-11-23
Citation statistics
Cited Times:1[CSCD]   [CSCD Record]
Document Type期刊论文
Identifierhttp://ir.semi.ac.cn/handle/172111/19829
Collection中国科学院半导体研究所(2009年前)
Recommended Citation
GB/T 7714
牛智川,周增圻,林耀望,等. MBE生长轻掺Si高迁移率GaAs材料的杂质补偿特性研究[J]. 半导体学报,1995,16(12):897.
APA 牛智川,周增圻,林耀望,&李朝勇.(1995).MBE生长轻掺Si高迁移率GaAs材料的杂质补偿特性研究.半导体学报,16(12),897.
MLA 牛智川,et al."MBE生长轻掺Si高迁移率GaAs材料的杂质补偿特性研究".半导体学报 16.12(1995):897.
Files in This Item:
File Name/Size DocType Version Access License
6014.pdf(262KB) 限制开放--Application Full Text
Related Services
Recommend this item
Bookmark
Usage statistics
Export to Endnote
Google Scholar
Similar articles in Google Scholar
[牛智川]'s Articles
[周增圻]'s Articles
[林耀望]'s Articles
Baidu academic
Similar articles in Baidu academic
[牛智川]'s Articles
[周增圻]'s Articles
[林耀望]'s Articles
Bing Scholar
Similar articles in Bing Scholar
[牛智川]'s Articles
[周增圻]'s Articles
[林耀望]'s Articles
Terms of Use
No data!
Social Bookmark/Share
All comments (0)
No comment.
 

Items in the repository are protected by copyright, with all rights reserved, unless otherwise indicated.