SEMI OpenIR  > 中国科学院半导体研究所(2009年前)
K对InP(100)表面催化氧化反应的同步辐射光电子能谱研究
季航; 赵特秀; 王晓平; 吴建新; 徐彭寿; 陆尔东; 许振嘉
1995
Source Publication半导体学报
Volume16Issue:2Pages:133
metadata_83中国科学技术大学物理系;中国科学技术大学结构成分分析中心;中国科学技术大学;中科院半导体所
Subject Area半导体材料
Funding Organization国家自然科学基金
Indexed ByCSCD
Language中文
CSCD IDCSCD:262076
Date Available2010-11-23
Citation statistics
Document Type期刊论文
Identifierhttp://ir.semi.ac.cn/handle/172111/19827
Collection中国科学院半导体研究所(2009年前)
Recommended Citation
GB/T 7714
季航,赵特秀,王晓平,等. K对InP(100)表面催化氧化反应的同步辐射光电子能谱研究[J]. 半导体学报,1995,16(2):133.
APA 季航.,赵特秀.,王晓平.,吴建新.,徐彭寿.,...&许振嘉.(1995).K对InP(100)表面催化氧化反应的同步辐射光电子能谱研究.半导体学报,16(2),133.
MLA 季航,et al."K对InP(100)表面催化氧化反应的同步辐射光电子能谱研究".半导体学报 16.2(1995):133.
Files in This Item:
File Name/Size DocType Version Access License
6013.pdf(387KB) 限制开放--Application Full Text
Related Services
Recommend this item
Bookmark
Usage statistics
Export to Endnote
Google Scholar
Similar articles in Google Scholar
[季航]'s Articles
[赵特秀]'s Articles
[王晓平]'s Articles
Baidu academic
Similar articles in Baidu academic
[季航]'s Articles
[赵特秀]'s Articles
[王晓平]'s Articles
Bing Scholar
Similar articles in Bing Scholar
[季航]'s Articles
[赵特秀]'s Articles
[王晓平]'s Articles
Terms of Use
No data!
Social Bookmark/Share
All comments (0)
No comment.
 

Items in the repository are protected by copyright, with all rights reserved, unless otherwise indicated.