SEMI OpenIR  > 中国科学院半导体研究所(2009年前)
InGaAs/GaAs应变量子阱中的激光发光动力学
徐仲英; 罗昌平; 金世荣; 许继宗; 郑宝真
1995
Source Publication半导体学报
Volume16Issue:2Pages:101
Abstract测量并分析了InGaAs/GaAs应变量子阱中的激子发光衰退特性,研究了激子发光寿命与In组分和阱宽的关系。发现In组分增大时,激子寿命变短,而发光寿命与阱宽的关系不大。文章分析了影响发光寿命的诸多因素,指出在InGaAs/GaAs量子阱中,由合金无序造成的散射对激子发光寿命有重要的影响。
metadata_83中科院半导体所;西安交通大学电子科学系
Subject Area光电子学
Indexed ByCSCD
Language中文
CSCD IDCSCD:262079
Date Available2010-11-23
Citation statistics
Cited Times:1[CSCD]   [CSCD Record]
Document Type期刊论文
Identifierhttp://ir.semi.ac.cn/handle/172111/19823
Collection中国科学院半导体研究所(2009年前)
Recommended Citation
GB/T 7714
徐仲英,罗昌平,金世荣,等. InGaAs/GaAs应变量子阱中的激光发光动力学[J]. 半导体学报,1995,16(2):101.
APA 徐仲英,罗昌平,金世荣,许继宗,&郑宝真.(1995).InGaAs/GaAs应变量子阱中的激光发光动力学.半导体学报,16(2),101.
MLA 徐仲英,et al."InGaAs/GaAs应变量子阱中的激光发光动力学".半导体学报 16.2(1995):101.
Files in This Item:
File Name/Size DocType Version Access License
6011.pdf(345KB) 限制开放--Application Full Text
Related Services
Recommend this item
Bookmark
Usage statistics
Export to Endnote
Google Scholar
Similar articles in Google Scholar
[徐仲英]'s Articles
[罗昌平]'s Articles
[金世荣]'s Articles
Baidu academic
Similar articles in Baidu academic
[徐仲英]'s Articles
[罗昌平]'s Articles
[金世荣]'s Articles
Bing Scholar
Similar articles in Bing Scholar
[徐仲英]'s Articles
[罗昌平]'s Articles
[金世荣]'s Articles
Terms of Use
No data!
Social Bookmark/Share
All comments (0)
No comment.
 

Items in the repository are protected by copyright, with all rights reserved, unless otherwise indicated.