SEMI OpenIR  > 中国科学院半导体研究所(2009年前)
H原子吸附对Si(113)表面的影响
张瑞勤; 吴汲安; 邢益荣
1995
Source Publication半导体学报
Volume16Issue:11Pages:815
Abstract采用半经验分子轨道理论方法AM1研究用Si_(16)H_(21)模拟的Si(113)高指数表面及其吸附H原子的体系,得到生成热和表面原子上受力随吸附的变化。从生成热分析得知,Si(113)表面上形成Si─H_2吸附比Si─H容易,且为放热吸附;受力分析指出了表面原子再构发生的趋向,而吸附则引起趋向改变。
metadata_83山东大学光电材料与器件所;中科院半导体所
Subject Area半导体材料
Funding Organization国家自然科学基金
Indexed ByCSCD
Language中文
CSCD IDCSCD:262082
Date Available2010-11-23
Citation statistics
Document Type期刊论文
Identifierhttp://ir.semi.ac.cn/handle/172111/19819
Collection中国科学院半导体研究所(2009年前)
Recommended Citation
GB/T 7714
张瑞勤,吴汲安,邢益荣. H原子吸附对Si(113)表面的影响[J]. 半导体学报,1995,16(11):815.
APA 张瑞勤,吴汲安,&邢益荣.(1995).H原子吸附对Si(113)表面的影响.半导体学报,16(11),815.
MLA 张瑞勤,et al."H原子吸附对Si(113)表面的影响".半导体学报 16.11(1995):815.
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