SEMI OpenIR  > 中国科学院半导体研究所(2009年前)
GaN的MOCVD生长
陆大成; 汪度; 王晓晖; 董建荣; 刘祥林; 高维滨; 李成基; 李蕴言
1995
Source Publication半导体学报
Volume16Issue:11Pages:831
AbstractGaN是重要的蓝光半导体材料。以TMGa和BH_3为源在(0112)α-Al_2O_3衬底上成功的用MOCVD方法生长了GaN外延层,研究了GaN的表面形貌与结晶学、电学和光学特性。GaN(2110)面的双晶回摆曲线衍射峰的最小半高宽已达16'。并观测到GaN所发出的紫外可见光波段的阴极荧光。
metadata_83中科院半导体所
Subject Area半导体材料
Indexed ByCSCD
Language中文
CSCD IDCSCD:262090
Date Available2010-11-23
Citation statistics
Document Type期刊论文
Identifierhttp://ir.semi.ac.cn/handle/172111/19813
Collection中国科学院半导体研究所(2009年前)
Recommended Citation
GB/T 7714
陆大成,汪度,王晓晖,等. GaN的MOCVD生长[J]. 半导体学报,1995,16(11):831.
APA 陆大成.,汪度.,王晓晖.,董建荣.,刘祥林.,...&李蕴言.(1995).GaN的MOCVD生长.半导体学报,16(11),831.
MLA 陆大成,et al."GaN的MOCVD生长".半导体学报 16.11(1995):831.
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