SEMI OpenIR  > 中国科学院半导体研究所(2009年前)
GaAs-AlxGa(1-x)As异质结构界面光激发过剩电子的热辅助隧穿俘获
何礼熊
1995
Source Publication半导体学报
Volume16Issue:4Pages:253
metadata_83中科院半导体所
Subject Area光电子学
Indexed ByCSCD
Language中文
Date Available2010-11-23
Citation statistics
Document Type期刊论文
Identifierhttp://ir.semi.ac.cn/handle/172111/19811
Collection中国科学院半导体研究所(2009年前)
Recommended Citation
GB/T 7714
何礼熊. GaAs-AlxGa(1-x)As异质结构界面光激发过剩电子的热辅助隧穿俘获[J]. 半导体学报,1995,16(4):253.
APA 何礼熊.(1995).GaAs-AlxGa(1-x)As异质结构界面光激发过剩电子的热辅助隧穿俘获.半导体学报,16(4),253.
MLA 何礼熊."GaAs-AlxGa(1-x)As异质结构界面光激发过剩电子的热辅助隧穿俘获".半导体学报 16.4(1995):253.
Files in This Item:
File Name/Size DocType Version Access License
6005.pdf(222KB) 限制开放--Application Full Text
Related Services
Recommend this item
Bookmark
Usage statistics
Export to Endnote
Google Scholar
Similar articles in Google Scholar
[何礼熊]'s Articles
Baidu academic
Similar articles in Baidu academic
[何礼熊]'s Articles
Bing Scholar
Similar articles in Bing Scholar
[何礼熊]'s Articles
Terms of Use
No data!
Social Bookmark/Share
All comments (0)
No comment.
 

Items in the repository are protected by copyright, with all rights reserved, unless otherwise indicated.