SEMI OpenIR  > 中国科学院半导体研究所(2009年前)
GaAs/AlGaAs多量子阱二维面阵红外探测器
李晋闽; 郑海群; 曾一平; 孔梅影
1995
Source Publication半导体学报
Volume16Issue:1Pages:48
Abstract报道10×16元二维面阵GaAs/AlGaAs多量子阱红外探测器的研究进展。通过表面光栅耦合,采用垂直入射的工作模式,在T=80K时探测率为2.9×10~(10)cm·Hz~(1/2)/W,电压响应率为1.3×10~4V/W。各测试单元间探测率和电压响应率的偏差小于18%,串音小于0.45%,在最大探测率偏置条件下,器件的暗电流密度为6.2×10~(-6)A/cm~2。
metadata_83中科院半导体所
Subject Area半导体材料
Indexed ByCSCD
Language中文
CSCD IDCSCD:262094
Date Available2010-11-23
Citation statistics
Cited Times:2[CSCD]   [CSCD Record]
Document Type期刊论文
Identifierhttp://ir.semi.ac.cn/handle/172111/19809
Collection中国科学院半导体研究所(2009年前)
Recommended Citation
GB/T 7714
李晋闽,郑海群,曾一平,等. GaAs/AlGaAs多量子阱二维面阵红外探测器[J]. 半导体学报,1995,16(1):48.
APA 李晋闽,郑海群,曾一平,&孔梅影.(1995).GaAs/AlGaAs多量子阱二维面阵红外探测器.半导体学报,16(1),48.
MLA 李晋闽,et al."GaAs/AlGaAs多量子阱二维面阵红外探测器".半导体学报 16.1(1995):48.
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