SEMI OpenIR  > 中国科学院半导体研究所(2009年前)
GaAs/AlGaAs二维电子气(2DEG)散射机理研究
杨斌; 陈涌海; 王占国; 梁基本; 廖奇为; 林兰英
1995
Source Publication半导体学报
Volume16Issue:4Pages:248
Abstract采用三角阱近似,计算了GaAs/AlGaAs二维电子气(2DEG)电子只占据基态子带时,由极性光学声子、声学形变势、声学压电势、远程电离杂质、本底电离杂质合金无序以及界面粗糙等七种主要的散射机制决定的电子迁移率与温度、2DEG浓度、本底电离杂质浓度、以及界面不平整度等的关系。理论计算结果与实验符合很好。
metadata_83中科院半导体所
Subject Area半导体材料
Indexed ByCSCD
Language中文
CSCD IDCSCD:262095
Date Available2010-11-23
Citation statistics
Cited Times:4[CSCD]   [CSCD Record]
Document Type期刊论文
Identifierhttp://ir.semi.ac.cn/handle/172111/19807
Collection中国科学院半导体研究所(2009年前)
Recommended Citation
GB/T 7714
杨斌,陈涌海,王占国,等. GaAs/AlGaAs二维电子气(2DEG)散射机理研究[J]. 半导体学报,1995,16(4):248.
APA 杨斌,陈涌海,王占国,梁基本,廖奇为,&林兰英.(1995).GaAs/AlGaAs二维电子气(2DEG)散射机理研究.半导体学报,16(4),248.
MLA 杨斌,et al."GaAs/AlGaAs二维电子气(2DEG)散射机理研究".半导体学报 16.4(1995):248.
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