SEMI OpenIR  > 中国科学院半导体研究所(2009年前)
GaAs/GaAlAs多量子阱(CCTS)结构双稳态激光器的实验研究
熊飞克; 高文智; 吴荣汉; 王启明
1995
Source Publication半导体学报
Volume16Issue:5Pages:354
Abstract报道了GaAs/GaAlAs多量子阱(MQW)双区共腔(CCTS)结构的双稳态激光器.该器件利用多次离子注入形成电隔离很好的双电极结构,吸收区上加上一定反偏电压时得到了双稳特性,观察到了器件工作于双稳态时对光谱边模的显著抑制.
metadata_83中科院半导体所
Subject Area光电子学
Funding Organization国家自然科学基金
Indexed ByCSCD
Language中文
CSCD IDCSCD:262097
Date Available2010-11-23
Citation statistics
Cited Times:1[CSCD]   [CSCD Record]
Document Type期刊论文
Identifierhttp://ir.semi.ac.cn/handle/172111/19805
Collection中国科学院半导体研究所(2009年前)
Recommended Citation
GB/T 7714
熊飞克,高文智,吴荣汉,等. GaAs/GaAlAs多量子阱(CCTS)结构双稳态激光器的实验研究[J]. 半导体学报,1995,16(5):354.
APA 熊飞克,高文智,吴荣汉,&王启明.(1995).GaAs/GaAlAs多量子阱(CCTS)结构双稳态激光器的实验研究.半导体学报,16(5),354.
MLA 熊飞克,et al."GaAs/GaAlAs多量子阱(CCTS)结构双稳态激光器的实验研究".半导体学报 16.5(1995):354.
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