Band-inhomogeneity in GaAs single crystal grown in space

SEMI OpenIR > 中国科学院半导体研究所（2009年前）

	Band-inhomogeneity in GaAs single crystal grown in space
	Zhou Bojun
	1995
Source Publication	半导体学报
Volume	16 Issue:2 Pages:158
metadata_83	中科院半导体所
Subject Area	半导体材料
Indexed By	CSCD
Language	英语
CSCD ID	CSCD:262112
Date Available	2010-11-23
Citation statistics	Cited Times:1[CSCD] [CSCD Record]
Document Type	期刊论文
Identifier	http://ir.semi.ac.cn/handle/172111/19793
Collection	中国科学院半导体研究所（2009年前）
Recommended Citation GB/T 7714	Zhou Bojun. Band-inhomogeneity in GaAs single crystal grown in space[J]. 半导体学报,1995,16(2):158.
APA	Zhou Bojun.(1995).Band-inhomogeneity in GaAs single crystal grown in space.半导体学报,16(2),158.
MLA	Zhou Bojun."Band-inhomogeneity in GaAs single crystal grown in space".半导体学报 16.2(1995):158.

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