SEMI OpenIR  > 中国科学院半导体研究所(2009年前)
Band-inhomogeneity in GaAs single crystal grown in space
Zhou Bojun
1995
Source Publication半导体学报
Volume16Issue:2Pages:158
metadata_83中科院半导体所
Subject Area半导体材料
Indexed ByCSCD
Language英语
CSCD IDCSCD:262112
Date Available2010-11-23
Citation statistics
Cited Times:1[CSCD]   [CSCD Record]
Document Type期刊论文
Identifierhttp://ir.semi.ac.cn/handle/172111/19793
Collection中国科学院半导体研究所(2009年前)
Recommended Citation
GB/T 7714
Zhou Bojun. Band-inhomogeneity in GaAs single crystal grown in space[J]. 半导体学报,1995,16(2):158.
APA Zhou Bojun.(1995).Band-inhomogeneity in GaAs single crystal grown in space.半导体学报,16(2),158.
MLA Zhou Bojun."Band-inhomogeneity in GaAs single crystal grown in space".半导体学报 16.2(1995):158.
Files in This Item:
File Name/Size DocType Version Access License
5996.pdf(264KB) 限制开放--Application Full Text
Related Services
Recommend this item
Bookmark
Usage statistics
Export to Endnote
Google Scholar
Similar articles in Google Scholar
[Zhou Bojun]'s Articles
Baidu academic
Similar articles in Baidu academic
[Zhou Bojun]'s Articles
Bing Scholar
Similar articles in Bing Scholar
[Zhou Bojun]'s Articles
Terms of Use
No data!
Social Bookmark/Share
All comments (0)
No comment.
 

Items in the repository are protected by copyright, with all rights reserved, unless otherwise indicated.