Knowledge Management System Of Institute of Semiconductors,CAS
Band-inhomogeneity in GaAs single crystal grown in space | |
Zhou Bojun | |
1995 | |
Source Publication | 半导体学报
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Volume | 16Issue:2Pages:158 |
metadata_83 | 中科院半导体所 |
Subject Area | 半导体材料 |
Indexed By | CSCD |
Language | 英语 |
CSCD ID | CSCD:262112 |
Date Available | 2010-11-23 |
Citation statistics |
Cited Times:1[CSCD]
[CSCD Record]
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Document Type | 期刊论文 |
Identifier | http://ir.semi.ac.cn/handle/172111/19793 |
Collection | 中国科学院半导体研究所(2009年前) |
Recommended Citation GB/T 7714 | Zhou Bojun. Band-inhomogeneity in GaAs single crystal grown in space[J]. 半导体学报,1995,16(2):158. |
APA | Zhou Bojun.(1995).Band-inhomogeneity in GaAs single crystal grown in space.半导体学报,16(2),158. |
MLA | Zhou Bojun."Band-inhomogeneity in GaAs single crystal grown in space".半导体学报 16.2(1995):158. |
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5996.pdf(264KB) | 限制开放 | -- | Application Full Text |
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