Knowledge Management System Of Institute of Semiconductors,CAS
用逐层淀积法制备a-Si:H薄膜 | |
潘广勤; 廖显伯; 王燕; 刁宏伟; 孔光临 | |
1995 | |
Source Publication | 电子学报
![]() |
Volume | 23Issue:5Pages:77 |
metadata_83 | 中科院半导体所 |
Subject Area | 半导体材料 |
Funding Organization | 国家自然科学基金 |
Indexed By | CSCD |
Language | 中文 |
CSCD ID | CSCD:266477 |
Date Available | 2010-11-23 |
Citation statistics | |
Document Type | 期刊论文 |
Identifier | http://ir.semi.ac.cn/handle/172111/19789 |
Collection | 中国科学院半导体研究所(2009年前) |
Recommended Citation GB/T 7714 | 潘广勤,廖显伯,王燕,等. 用逐层淀积法制备a-Si:H薄膜[J]. 电子学报,1995,23(5):77. |
APA | 潘广勤,廖显伯,王燕,刁宏伟,&孔光临.(1995).用逐层淀积法制备a-Si:H薄膜.电子学报,23(5),77. |
MLA | 潘广勤,et al."用逐层淀积法制备a-Si:H薄膜".电子学报 23.5(1995):77. |
Files in This Item: | ||||||
File Name/Size | DocType | Version | Access | License | ||
5994.pdf(193KB) | 限制开放 | -- | Application Full Text |
Items in the repository are protected by copyright, with all rights reserved, unless otherwise indicated.
Edit Comment