用逐层淀积法制备a-Si:H薄膜

SEMI OpenIR > 中国科学院半导体研究所（2009年前）

	用逐层淀积法制备a-Si:H薄膜
	潘广勤; 廖显伯; 王燕; 刁宏伟; 孔光临
	1995
Source Publication	电子学报
Volume	23 Issue:5 Pages:77
metadata_83	中科院半导体所
Subject Area	半导体材料
Funding Organization	国家自然科学基金
Indexed By	CSCD
Language	中文
CSCD ID	CSCD:266477
Date Available	2010-11-23
Citation statistics
Document Type	期刊论文
Identifier	http://ir.semi.ac.cn/handle/172111/19789
Collection	中国科学院半导体研究所（2009年前）
Recommended Citation GB/T 7714	潘广勤,廖显伯,王燕,等. 用逐层淀积法制备a-Si:H薄膜[J]. 电子学报,1995,23(5):77.
APA	潘广勤,廖显伯,王燕,刁宏伟,&孔光临.(1995).用逐层淀积法制备a-Si:H薄膜.电子学报,23(5),77.
MLA	潘广勤,et al."用逐层淀积法制备a-Si:H薄膜".电子学报 23.5(1995):77.

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