SEMI OpenIR  > 中国科学院半导体研究所(2009年前)
用逐层淀积法制备a-Si:H薄膜
潘广勤; 廖显伯; 王燕; 刁宏伟; 孔光临
1995
Source Publication电子学报
Volume23Issue:5Pages:77
metadata_83中科院半导体所
Subject Area半导体材料
Funding Organization国家自然科学基金
Indexed ByCSCD
Language中文
CSCD IDCSCD:266477
Date Available2010-11-23
Citation statistics
Document Type期刊论文
Identifierhttp://ir.semi.ac.cn/handle/172111/19789
Collection中国科学院半导体研究所(2009年前)
Recommended Citation
GB/T 7714
潘广勤,廖显伯,王燕,等. 用逐层淀积法制备a-Si:H薄膜[J]. 电子学报,1995,23(5):77.
APA 潘广勤,廖显伯,王燕,刁宏伟,&孔光临.(1995).用逐层淀积法制备a-Si:H薄膜.电子学报,23(5),77.
MLA 潘广勤,et al."用逐层淀积法制备a-Si:H薄膜".电子学报 23.5(1995):77.
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