SEMI OpenIR  > 中国科学院半导体研究所(2009年前)
应变(Ge)5/(Si)5超晶格的光学增益
董文甫; 王启明
1995
Source Publication发光学报
Volume16Issue:4Pages:293
metadata_83中科院半导体所
Subject Area半导体物理
Indexed ByCSCD
Language中文
CSCD IDCSCD:267317
Date Available2010-11-23
Citation statistics
Document Type期刊论文
Identifierhttp://ir.semi.ac.cn/handle/172111/19777
Collection中国科学院半导体研究所(2009年前)
Recommended Citation
GB/T 7714
董文甫,王启明. 应变(Ge)5/(Si)5超晶格的光学增益[J]. 发光学报,1995,16(4):293.
APA 董文甫,&王启明.(1995).应变(Ge)5/(Si)5超晶格的光学增益.发光学报,16(4),293.
MLA 董文甫,et al."应变(Ge)5/(Si)5超晶格的光学增益".发光学报 16.4(1995):293.
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