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GaAs/GaAlAs多量子阱反射型光调制器及自电光效应器件
吴荣汉; 高文智; 赵军; 段海龙; 林世鸣; 钟战天; 黄永箴; 王启明
1995
Source Publication光子学报
Volume24Issue:5Pages:388
Abstract采用分子束外延技术生长含有大周期数的GaAs/GaAlAs多量子阱(MQW)及分布布喇格反射器(DBR)的PIN结构器件。研究了量子限制斯塔克效应(QCSE),分布布喇格反射及非对称腔模(ASFP)效应对光的反射调制作用及这三种效应的兼容性对光调制及逻辑器件的重要影响,给出研制的反射型光调制器及自电光效应器件的实验结果,对于常通型及常闭型调制器,其两态衬比度可达10 dB。所研制的SEED器件,其导通光能耗低于10 fJ/(μm)~2,实现其光学双稳态及R-S光触发器工作。
metadata_83中科院半导体所
Subject Area半导体器件
Funding Organization国家自然科学基金
Indexed ByCSCD
Language中文
CSCD IDCSCD:270639
Date Available2010-11-23
Citation statistics
Cited Times:3[CSCD]   [CSCD Record]
Document Type期刊论文
Identifierhttp://ir.semi.ac.cn/handle/172111/19771
Collection中国科学院半导体研究所(2009年前)
Recommended Citation
GB/T 7714
吴荣汉,高文智,赵军,等. GaAs/GaAlAs多量子阱反射型光调制器及自电光效应器件[J]. 光子学报,1995,24(5):388.
APA 吴荣汉.,高文智.,赵军.,段海龙.,林世鸣.,...&王启明.(1995).GaAs/GaAlAs多量子阱反射型光调制器及自电光效应器件.光子学报,24(5),388.
MLA 吴荣汉,et al."GaAs/GaAlAs多量子阱反射型光调制器及自电光效应器件".光子学报 24.5(1995):388.
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