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MBE CdTe/GaAs光致发光研究
陈世达; 林立; 何先忠; 许继宗; 罗昌平; 徐仲英
1995
Source Publication红外与毫米波学报
Volume14Issue:3Pages:189
Abstract在10K低温下对分子束外延生长的CdTe(111)B/GaAs(100)和CdTe(211)B/GaAs(211)B外延膜进行了光致发光(PL)测量,得到了PL谱和带边激子辐射的精细结构。
metadata_83华北光电技术所;中科院半导体所
Subject Area半导体物理
Indexed ByCSCD
Language中文
CSCD IDCSCD:272189
Date Available2010-11-23
Citation statistics
Document Type期刊论文
Identifierhttp://ir.semi.ac.cn/handle/172111/19765
Collection中国科学院半导体研究所(2009年前)
Recommended Citation
GB/T 7714
陈世达,林立,何先忠,等. MBE CdTe/GaAs光致发光研究[J]. 红外与毫米波学报,1995,14(3):189.
APA 陈世达,林立,何先忠,许继宗,罗昌平,&徐仲英.(1995).MBE CdTe/GaAs光致发光研究.红外与毫米波学报,14(3),189.
MLA 陈世达,et al."MBE CdTe/GaAs光致发光研究".红外与毫米波学报 14.3(1995):189.
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