GaAs/Al（0.3）Ga（0.7）As短周期超晶格中负微分电导效应的观察

SEMI OpenIR > 中国科学院半导体研究所（2009年前）

	GaAs/Al（0.3）Ga（0.7）As短周期超晶格中负微分电导效应的观察
	徐士杰; 刘剑; 郑厚植; 李月霞; 李承芳; 郑海群
	1995
Source Publication	科学通报
Volume	40 Issue:5 Pages:407
metadata_83	中科院半导体所
Subject Area	半导体物理
Indexed By	CSCD
Language	中文
CSCD ID	CSCD:275847
Date Available	2010-11-23
Citation statistics
Document Type	期刊论文
Identifier	http://ir.semi.ac.cn/handle/172111/19759
Collection	中国科学院半导体研究所（2009年前）
Recommended Citation GB/T 7714	徐士杰,刘剑,郑厚植,等. GaAs/Al（0.3）Ga（0.7）As短周期超晶格中负微分电导效应的观察[J]. 科学通报,1995,40(5):407.
APA	徐士杰,刘剑,郑厚植,李月霞,李承芳,&郑海群.(1995).GaAs/Al（0.3）Ga（0.7）As短周期超晶格中负微分电导效应的观察.科学通报,40(5),407.
MLA	徐士杰,et al."GaAs/Al（0.3）Ga（0.7）As短周期超晶格中负微分电导效应的观察".科学通报 40.5(1995):407.

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