SEMI OpenIR  > 中国科学院半导体研究所(2009年前)
Ag/AuGeNi/n-GaSb欧姆接触的研究
钟兴儒; 刘爱民; 林兰英; 常秀兰; 陶琨; 陈顺英
1995
Source Publication太阳能学报
Volume16Issue:4Pages:384
Abstract研究了Ag/AuGeNi/n-GaSb在150℃─450℃下合金处理对欧姆接触的的影响,最佳合金温度为220℃,此时接触电阻率为6.7×10~(-4)Ωcm~2。用AES和XRD研究了金属半导体界面处的扩散及物相变化,并讨论了接触电阻率与微结构的关系。
metadata_83中科院半导体所;清华大学材料科学所
Subject Area半导体材料
Indexed ByCSCD
Language中文
CSCD IDCSCD:281109
Date Available2010-11-23
Citation statistics
Document Type期刊论文
Identifierhttp://ir.semi.ac.cn/handle/172111/19751
Collection中国科学院半导体研究所(2009年前)
Recommended Citation
GB/T 7714
钟兴儒,刘爱民,林兰英,等. Ag/AuGeNi/n-GaSb欧姆接触的研究[J]. 太阳能学报,1995,16(4):384.
APA 钟兴儒,刘爱民,林兰英,常秀兰,陶琨,&陈顺英.(1995).Ag/AuGeNi/n-GaSb欧姆接触的研究.太阳能学报,16(4),384.
MLA 钟兴儒,et al."Ag/AuGeNi/n-GaSb欧姆接触的研究".太阳能学报 16.4(1995):384.
Files in This Item:
File Name/Size DocType Version Access License
5975.pdf(274KB) 限制开放--Application Full Text
Related Services
Recommend this item
Bookmark
Usage statistics
Export to Endnote
Google Scholar
Similar articles in Google Scholar
[钟兴儒]'s Articles
[刘爱民]'s Articles
[林兰英]'s Articles
Baidu academic
Similar articles in Baidu academic
[钟兴儒]'s Articles
[刘爱民]'s Articles
[林兰英]'s Articles
Bing Scholar
Similar articles in Bing Scholar
[钟兴儒]'s Articles
[刘爱民]'s Articles
[林兰英]'s Articles
Terms of Use
No data!
Social Bookmark/Share
All comments (0)
No comment.
 

Items in the repository are protected by copyright, with all rights reserved, unless otherwise indicated.