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MBE和MOCVD生长的AlGaAs/GaAs GRIN-SCH SQW激光器深中心的比较
卢励吾; 周洁; 封松林; 徐俊英; 杨辉
1995
Source Publication物理学报
Volume44Issue:8Pages:1249
Abstract应用深能级瞬态谱(DLTS)技术详细研究分子束外延(MBE)和金属有机物化学汽相淀积(MOCVD)生长的AlGaAs/GaAs激光器的深中心。结果表明,在激光器的n-AlGaAs层里除众所周知的DX中心外,还存在着较大浓度和俘获截面的深(电子或空穴)陷阱,它们直接影响着激光器的性能。
metadata_83中科院半导体所
Subject Area半导体器件
Indexed ByCSCD
Language中文
CSCD IDCSCD:282964
Date Available2010-11-23
Citation statistics
Document Type期刊论文
Identifierhttp://ir.semi.ac.cn/handle/172111/19737
Collection中国科学院半导体研究所(2009年前)
Recommended Citation
GB/T 7714
卢励吾,周洁,封松林,等. MBE和MOCVD生长的AlGaAs/GaAs GRIN-SCH SQW激光器深中心的比较[J]. 物理学报,1995,44(8):1249.
APA 卢励吾,周洁,封松林,徐俊英,&杨辉.(1995).MBE和MOCVD生长的AlGaAs/GaAs GRIN-SCH SQW激光器深中心的比较.物理学报,44(8),1249.
MLA 卢励吾,et al."MBE和MOCVD生长的AlGaAs/GaAs GRIN-SCH SQW激光器深中心的比较".物理学报 44.8(1995):1249.
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