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GaAs(100)的(NH4)2Sx和P2S5/(NH4)2Sx表面钝化
陈维德; 金高龙; 高志强; 崔玉德; 段俐宏
1995
Source Publication物理学报
Volume44Issue:8Pages:1328
metadata_83中科院半导体所;中科院物理所
Subject Area半导体材料
Funding Organization国家自然科学基金
Indexed ByCSCD
Language中文
Date Available2010-11-23
Citation statistics
Document Type期刊论文
Identifierhttp://ir.semi.ac.cn/handle/172111/19735
Collection中国科学院半导体研究所(2009年前)
Recommended Citation
GB/T 7714
陈维德,金高龙,高志强,等. GaAs(100)的(NH4)2Sx和P2S5/(NH4)2Sx表面钝化[J]. 物理学报,1995,44(8):1328.
APA 陈维德,金高龙,高志强,崔玉德,&段俐宏.(1995).GaAs(100)的(NH4)2Sx和P2S5/(NH4)2Sx表面钝化.物理学报,44(8),1328.
MLA 陈维德,et al."GaAs(100)的(NH4)2Sx和P2S5/(NH4)2Sx表面钝化".物理学报 44.8(1995):1328.
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