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GaAs/Si外延层X射线双晶衍射摇摆曲线的动力学模拟和位错密度的测量
郝茂盛; 王玉田; 梁骏吾
1995
Source Publication中国科学. A辑,数学
Volume25Issue:11Pages:1175
metadata_83中科院半导体所
Subject Area光电子学
Indexed ByCSCD
Language中文
CSCD IDCSCD:287633
Date Available2010-11-23
Citation statistics
Document Type期刊论文
Identifierhttp://ir.semi.ac.cn/handle/172111/19731
Collection中国科学院半导体研究所(2009年前)
Recommended Citation
GB/T 7714
郝茂盛,王玉田,梁骏吾. GaAs/Si外延层X射线双晶衍射摇摆曲线的动力学模拟和位错密度的测量[J]. 中国科学. A辑,数学,1995,25(11):1175.
APA 郝茂盛,王玉田,&梁骏吾.(1995).GaAs/Si外延层X射线双晶衍射摇摆曲线的动力学模拟和位错密度的测量.中国科学. A辑,数学,25(11),1175.
MLA 郝茂盛,et al."GaAs/Si外延层X射线双晶衍射摇摆曲线的动力学模拟和位错密度的测量".中国科学. A辑,数学 25.11(1995):1175.
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