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锗硅合金半导体中无声子参与光跃迁机制研究
董文甫; 王启明; 杨沁清
1996
Source Publication光学学报
Volume16Issue:11Pages:1641
Abstract研究了Si_1-xGe_x合金半导体中无声子参与光跃迁的产生机制,对由杂质无规分布引起的无声子参与光跃迁给出了一个物理模型.用此模型计算了光跃迁遇极矩,给出了跃迁偶极矩的上限.提出了未掺杂Si_1-xGe_x合金半导体中无声子参与光跃迁的一种跃机制,认为是Ge原子周围波函数畸变的集体行为.
metadata_83中科院半导体所
Subject Area光电子学
Indexed ByCSCD
Language中文
CSCD IDCSCD:294844
Date Available2010-11-23
Citation statistics
Document Type期刊论文
Identifierhttp://ir.semi.ac.cn/handle/172111/19725
Collection中国科学院半导体研究所(2009年前)
Recommended Citation
GB/T 7714
董文甫,王启明,杨沁清. 锗硅合金半导体中无声子参与光跃迁机制研究[J]. 光学学报,1996,16(11):1641.
APA 董文甫,王启明,&杨沁清.(1996).锗硅合金半导体中无声子参与光跃迁机制研究.光学学报,16(11),1641.
MLA 董文甫,et al."锗硅合金半导体中无声子参与光跃迁机制研究".光学学报 16.11(1996):1641.
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