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p型Si(1-x)Gex应变层中重掺杂禁带窄变的计算
吴文刚; 张万荣; 江德生; 罗晋生
1996
Source Publication电子科学学刊
Volume18Issue:6Pages:638
metadata_83中科院半导体所;西安交通大学电子工程系
Subject Area半导体物理
Indexed ByCSCD
Language中文
Date Available2010-11-23
Citation statistics
Document Type期刊论文
Identifierhttp://ir.semi.ac.cn/handle/172111/19723
Collection中国科学院半导体研究所(2009年前)
Recommended Citation
GB/T 7714
吴文刚,张万荣,江德生,等. p型Si(1-x)Gex应变层中重掺杂禁带窄变的计算[J]. 电子科学学刊,1996,18(6):638.
APA 吴文刚,张万荣,江德生,&罗晋生.(1996).p型Si(1-x)Gex应变层中重掺杂禁带窄变的计算.电子科学学刊,18(6),638.
MLA 吴文刚,et al."p型Si(1-x)Gex应变层中重掺杂禁带窄变的计算".电子科学学刊 18.6(1996):638.
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