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MOCVD生长大功率单量子阱激光器
郑联喜; 肖智博; 韩勤; 金才政; 周帆; 马朝华; 胡雄伟
1996
Source Publication半导体学报
Volume17Issue:5Pages:392
Abstract介绍了MOCVD生长的高质量GaAs和AlAs材料以及(Al)GaAs/AlGaAs分别限制单量子阱激光器.GaAs材料的77K迁移率为122.700cm~2/(V·s),GaAs/AlAs具有均匀陡变的界面.激光器的最大光输出功率为4W,平均光功率密度达4MW/cm~2,斜率效率为1.2W/A,在1W恒功老化4000小时电流增加小于10%,预计寿命可超过两万小时.
metadata_83中科院半导体所
Subject Area半导体器件
Indexed ByCSCD
Language中文
CSCD IDCSCD:297272
Date Available2010-11-23
Citation statistics
Document Type期刊论文
Identifierhttp://ir.semi.ac.cn/handle/172111/19721
Collection中国科学院半导体研究所(2009年前)
Recommended Citation
GB/T 7714
郑联喜,肖智博,韩勤,等. MOCVD生长大功率单量子阱激光器[J]. 半导体学报,1996,17(5):392.
APA 郑联喜.,肖智博.,韩勤.,金才政.,周帆.,...&胡雄伟.(1996).MOCVD生长大功率单量子阱激光器.半导体学报,17(5),392.
MLA 郑联喜,et al."MOCVD生长大功率单量子阱激光器".半导体学报 17.5(1996):392.
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