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InGaAs/GaAs应变层量子阱激光器深中心行为
卢励吾; 封松林; 周洁; 杨国文; 徐俊英; 郭春伟
1996
Source Publication半导体学报
Volume17Issue:7Pages:493
Abstract应用深能级瞬态谱(DLTS)技术研究分子束外延(MBE)和二次液相外延(LPE)生长的InGaAs/GaAs应变层量子阱激光器深中心行为,在MBE激光器的n-Al_xGa_(1-x)As组分缓变层和限制层里,除众所周知的DX中心外,还观察到有较大俘获截面的深(空穴、电子)陷阱及其相互转化.这些陷阱可能分布在x从0到0.40和x=0.40的n-Al_xGa_(1-x)As层里x值不连续的界面附近.而在LPE激光器的n-Al_xGa_(1-x)As组分缓变层和限制层里,DX中心浓度明显减少,且深(空穴、电子)陷阱消失,这表明LPE掩埋结构工艺可能对激光器深中心的消除或减少有一定作用.深中心的变化与样品阈值电流密度的改善是相符的.
metadata_83中科院半导体所;北京四通办公设备公司
Subject Area半导体器件
Indexed ByCSCD
Language中文
CSCD IDCSCD:297276
Date Available2010-11-23
Citation statistics
Document Type期刊论文
Identifierhttp://ir.semi.ac.cn/handle/172111/19717
Collection中国科学院半导体研究所(2009年前)
Recommended Citation
GB/T 7714
卢励吾,封松林,周洁,等. InGaAs/GaAs应变层量子阱激光器深中心行为[J]. 半导体学报,1996,17(7):493.
APA 卢励吾,封松林,周洁,杨国文,徐俊英,&郭春伟.(1996).InGaAs/GaAs应变层量子阱激光器深中心行为.半导体学报,17(7),493.
MLA 卢励吾,et al."InGaAs/GaAs应变层量子阱激光器深中心行为".半导体学报 17.7(1996):493.
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