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电子束辐照对InP(100)表面硫钝化的增强作用
陈维德; 李秀琼; 段俐宏; 谢小龙
1996
Source Publication半导体学报
Volume17Issue:7Pages:518
Abstract采用含有过量硫的(NH_4)_2S_x对InP(100)表面进行化学钝化和辉光放电电子束辐照处理,液氮下光致发光强度比未辐射的光致发光强度提高了1.5倍,比未钝化的提高了5倍.利用X射线光电子谱研究了电子辐照对InP表面硫钝化的影响.结果表明,硫钝化InP表面经电子束辐照可以促使S与InP更好的化合.
metadata_83中科院半导体所;中科院微电子中心
Subject Area半导体化学
Funding Organization国家自然科学基金
Indexed ByCSCD
Language中文
CSCD IDCSCD:297280
Date Available2010-11-23
Citation statistics
Cited Times:1[CSCD]   [CSCD Record]
Document Type期刊论文
Identifierhttp://ir.semi.ac.cn/handle/172111/19713
Collection中国科学院半导体研究所(2009年前)
Recommended Citation
GB/T 7714
陈维德,李秀琼,段俐宏,等. 电子束辐照对InP(100)表面硫钝化的增强作用[J]. 半导体学报,1996,17(7):518.
APA 陈维德,李秀琼,段俐宏,&谢小龙.(1996).电子束辐照对InP(100)表面硫钝化的增强作用.半导体学报,17(7),518.
MLA 陈维德,et al."电子束辐照对InP(100)表面硫钝化的增强作用".半导体学报 17.7(1996):518.
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