SEMI OpenIR  > 中国科学院半导体研究所(2009年前)
GaN的MOVPE生长和m-i-n型蓝光LED的试制
陆大成; 刘祥林; 汪度; 王晓军; 林兰英
1996
Source Publication高技术通讯
Volume6Issue:3Pages:1
metadata_83中科院半导体所
Subject Area半导体材料
Funding Organization国家863计划
Indexed ByCSCD
Language中文
CSCD IDCSCD:298175
Date Available2010-11-23
Citation statistics
Cited Times:1[CSCD]   [CSCD Record]
Document Type期刊论文
Identifierhttp://ir.semi.ac.cn/handle/172111/19703
Collection中国科学院半导体研究所(2009年前)
Recommended Citation
GB/T 7714
陆大成,刘祥林,汪度,等. GaN的MOVPE生长和m-i-n型蓝光LED的试制[J]. 高技术通讯,1996,6(3):1.
APA 陆大成,刘祥林,汪度,王晓军,&林兰英.(1996).GaN的MOVPE生长和m-i-n型蓝光LED的试制.高技术通讯,6(3),1.
MLA 陆大成,et al."GaN的MOVPE生长和m-i-n型蓝光LED的试制".高技术通讯 6.3(1996):1.
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