SEMI OpenIR  > 中国科学院半导体研究所(2009年前)
三端1.3μm InGaAsP/Inp双区共腔激光器
张权生; 石志文; 杜云; 赵军; 颜学进
1996
Source Publication高技术通讯
Volume6Issue:7Pages:27
metadata_83中科院半导体所
Subject Area半导体器件
Funding Organization国家自然科学基金,国家863计划
Indexed ByCSCD
Language中文
CSCD IDCSCD:298245
Date Available2010-11-23
Citation statistics
Document Type期刊论文
Identifierhttp://ir.semi.ac.cn/handle/172111/19699
Collection中国科学院半导体研究所(2009年前)
Recommended Citation
GB/T 7714
张权生,石志文,杜云,等. 三端1.3μm InGaAsP/Inp双区共腔激光器[J]. 高技术通讯,1996,6(7):27.
APA 张权生,石志文,杜云,赵军,&颜学进.(1996).三端1.3μm InGaAsP/Inp双区共腔激光器.高技术通讯,6(7),27.
MLA 张权生,et al."三端1.3μm InGaAsP/Inp双区共腔激光器".高技术通讯 6.7(1996):27.
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