SEMI OpenIR  > 中国科学院半导体研究所(2009年前)
实用化GaInP-AlGaInP半导体量子阱可见光激光器
熊飞克; 郭良科; 马骁宇; 杨志鸿; 王树堂; 陈良惠
1996
Source Publication高技术通讯
Volume6Issue:11Pages:1
Abstract用低压MOVPE方法研制出了波长为655nm与670nm的GaInP-AIGaInP半导体量子阱可见光激光器,并已形成一定的批量生产能力。器件的阈值电流典型值为45mA,输出光功率不小于5mW,最高工作温度不低于50℃,预计20℃时寿命接近100000小时,主要技术指标与目前进口的同类产品水平相当,完全可以满足实用要求。
metadata_83中科院半导体所
Subject Area半导体器件
Funding Organization国家863计划
Indexed ByCSCD
Language中文
CSCD IDCSCD:298301
Date Available2010-11-23
Citation statistics
Document Type期刊论文
Identifierhttp://ir.semi.ac.cn/handle/172111/19693
Collection中国科学院半导体研究所(2009年前)
Recommended Citation
GB/T 7714
熊飞克,郭良科,马骁宇,等. 实用化GaInP-AlGaInP半导体量子阱可见光激光器[J]. 高技术通讯,1996,6(11):1.
APA 熊飞克,郭良科,马骁宇,杨志鸿,王树堂,&陈良惠.(1996).实用化GaInP-AlGaInP半导体量子阱可见光激光器.高技术通讯,6(11),1.
MLA 熊飞克,et al."实用化GaInP-AlGaInP半导体量子阱可见光激光器".高技术通讯 6.11(1996):1.
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