SEMI OpenIR  > 中国科学院半导体研究所(2009年前)
InGaAsP/InP PFBH激光器
张静媛; 王圩; 汪孝杰; 田慧良
1996
Source Publication高技术通讯
Volume6Issue:12Pages:10
Abstract采用N-InP衬底研制InGaAsP/InP激光器和DFB激光器在国内已报导多次,该文介绍用P-InP衬底研制InFaAsP/InP平面埋层异质结构(PFBH)激光器和DFB-PFBH激光器,同时利用晶体生长和晶向的依赖关系,改进埋区的结构,使器件最高激射温度大于100℃。
metadata_83中科院半导体所
Subject Area半导体器件
Funding Organization国家863计划,五年计划
Indexed ByCSCD
Language中文
CSCD IDCSCD:298319
Date Available2010-11-23
Citation statistics
Document Type期刊论文
Identifierhttp://ir.semi.ac.cn/handle/172111/19689
Collection中国科学院半导体研究所(2009年前)
Recommended Citation
GB/T 7714
张静媛,王圩,汪孝杰,等. InGaAsP/InP PFBH激光器[J]. 高技术通讯,1996,6(12):10.
APA 张静媛,王圩,汪孝杰,&田慧良.(1996).InGaAsP/InP PFBH激光器.高技术通讯,6(12),10.
MLA 张静媛,et al."InGaAsP/InP PFBH激光器".高技术通讯 6.12(1996):10.
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