SEMI OpenIR  > 中国科学院半导体研究所(2009年前)
ZnSe的MOVPE生长相图以DMZn和H2Se为源
段树坤; 陆大成
1996
Source Publication半导体学报
Volume17Issue:6Pages:401
Abstract基于热力学平衡计算,首次给出以DMZn和H_2Se为源,MOVPE生长ZnSe的相图.文中讨论了ZnSe单一凝聚相区的范围,以及可能出ZnSe(s)+Zn(s)或ZnSe(s)+Se(1)两种双凝聚相区的条件.
metadata_83中科院半导体所
Subject Area半导体材料
Funding Organization国家自然科学基金
Indexed ByCSCD
Language中文
Date Available2010-11-23
Citation statistics
Document Type期刊论文
Identifierhttp://ir.semi.ac.cn/handle/172111/19677
Collection中国科学院半导体研究所(2009年前)
Recommended Citation
GB/T 7714
段树坤,陆大成. ZnSe的MOVPE生长相图以DMZn和H2Se为源[J]. 半导体学报,1996,17(6):401.
APA 段树坤,&陆大成.(1996).ZnSe的MOVPE生长相图以DMZn和H2Se为源.半导体学报,17(6),401.
MLA 段树坤,et al."ZnSe的MOVPE生长相图以DMZn和H2Se为源".半导体学报 17.6(1996):401.
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