SEMI OpenIR  > 中国科学院半导体研究所(2009年前)
四极SIMS对AlxGa1-xAs中Si的定量分析
姜志雄; 查良镇; 王佑祥; 陈春华; 陈新
1996
Source Publication半导体学报
Volume17Issue:6Pages:421
Abstract讨论了用MIQ-156四极SIMS仪器对Al_xGa_(1-x)As中Si进行定量分析的实验方法,考察了测量结果的重复性及x变化时Si RSF的变化规律,在IMS-4f SIMS仪器上进行了对比测试,用Cs~+源对~(29)Si的原子检测限达到4×10~(15)cm~(-3).
metadata_83清华大学电子工程系;中科院半导体所
Subject Area半导体材料
Funding Organization国家自然科学基金
Indexed ByCSCD
Language中文
Date Available2010-11-23
Citation statistics
Document Type期刊论文
Identifierhttp://ir.semi.ac.cn/handle/172111/19675
Collection中国科学院半导体研究所(2009年前)
Recommended Citation
GB/T 7714
姜志雄,查良镇,王佑祥,等. 四极SIMS对AlxGa1-xAs中Si的定量分析[J]. 半导体学报,1996,17(6):421.
APA 姜志雄,查良镇,王佑祥,陈春华,&陈新.(1996).四极SIMS对AlxGa1-xAs中Si的定量分析.半导体学报,17(6),421.
MLA 姜志雄,et al."四极SIMS对AlxGa1-xAs中Si的定量分析".半导体学报 17.6(1996):421.
Files in This Item:
File Name/Size DocType Version Access License
5937.pdf(394KB) 限制开放--Application Full Text
Related Services
Recommend this item
Bookmark
Usage statistics
Export to Endnote
Google Scholar
Similar articles in Google Scholar
[姜志雄]'s Articles
[查良镇]'s Articles
[王佑祥]'s Articles
Baidu academic
Similar articles in Baidu academic
[姜志雄]'s Articles
[查良镇]'s Articles
[王佑祥]'s Articles
Bing Scholar
Similar articles in Bing Scholar
[姜志雄]'s Articles
[查良镇]'s Articles
[王佑祥]'s Articles
Terms of Use
No data!
Social Bookmark/Share
All comments (0)
No comment.
 

Items in the repository are protected by copyright, with all rights reserved, unless otherwise indicated.