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利用快速热退火在n-GaAs上形成Ge/pdge欧姆接触
陈维德; 谢小龙; 崔玉德; 段俐宏; 许振嘉
1996
Source Publication半导体学报
Volume17Issue:10Pages:784
Abstract利用Ge/Pd/GaAs结构和快速热退火工艺在n-GaAS上形成低阻的欧姆接触.研究了比接触电阻率与退火的温度和时间关系,400~500℃之间退火的欧姆接触的比接触电阻率为~10~(-6)Ω·cm~2.接触层的表面光滑、界面平整.利用俄歇电子谱(AES)和二次离子质谱(SLMS)揭示和讨论了比接触电阻率的欧姆接触形成的机理.
metadata_83中科院半导体所
Subject Area半导体材料
Funding Organization国家自然科学基金
Indexed ByCSCD
Language中文
CSCD IDCSCD:306375
Date Available2010-11-23
Citation statistics
Document Type期刊论文
Identifierhttp://ir.semi.ac.cn/handle/172111/19673
Collection中国科学院半导体研究所(2009年前)
Recommended Citation
GB/T 7714
陈维德,谢小龙,崔玉德,等. 利用快速热退火在n-GaAs上形成Ge/pdge欧姆接触[J]. 半导体学报,1996,17(10):784.
APA 陈维德,谢小龙,崔玉德,段俐宏,&许振嘉.(1996).利用快速热退火在n-GaAs上形成Ge/pdge欧姆接触.半导体学报,17(10),784.
MLA 陈维德,et al."利用快速热退火在n-GaAs上形成Ge/pdge欧姆接触".半导体学报 17.10(1996):784.
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