SEMI OpenIR  > 中国科学院半导体研究所(2009年前)
自组织生长InAs量子点发光的温度特性
吕振东; 杨小平; 袁之良; 徐仲英; 郑宝真; 许继宗; 陈弘; 黄绮; 周均铭; 王建农; 王玉琦; 葛惟昆
1996
Source Publication半导体学报
Volume17Issue:10Pages:793
Abstract报道了InAs/GaAs自组织生长量子点结构中发光的温度特性.在12~150K温度范围内,实验测得的InAs激子发光能量随温度增加明显红移,其红移速率远大于InAs带隙的温度关系,而光谱宽度则明显减小.这些结果表明InAs量子点结构是一种强耦合系统,局域在InAs量子点中的载流子波函数会相互交迭、相互贯穿,从而增强了载流子的弛豫过程.
metadata_83中科院半导体所;中科院物理所;香港科技大学物理系
Subject Area半导体材料
Funding Organization国家自然科学基金,攀登计划
Indexed ByCSCD
Language中文
CSCD IDCSCD:306377
Date Available2010-11-23
Citation statistics
Cited Times:1[CSCD]   [CSCD Record]
Document Type期刊论文
Identifierhttp://ir.semi.ac.cn/handle/172111/19671
Collection中国科学院半导体研究所(2009年前)
Recommended Citation
GB/T 7714
吕振东,杨小平,袁之良,等. 自组织生长InAs量子点发光的温度特性[J]. 半导体学报,1996,17(10):793.
APA 吕振东.,杨小平.,袁之良.,徐仲英.,郑宝真.,...&葛惟昆.(1996).自组织生长InAs量子点发光的温度特性.半导体学报,17(10),793.
MLA 吕振东,et al."自组织生长InAs量子点发光的温度特性".半导体学报 17.10(1996):793.
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